Our Semiconductor Lasers and Superluminescent Diodes use MOCVD grown InGaAs/GaAlAs/GaAs , InGaAsP/InP and AlGaInP/GaAs Quantum Wells Heterostructures and are characterized by low threshold currents and high photo-electron conversion efficiency.
The devices are manufactured in all standard types of packages and mounts that include open heat sink (or C-mount), TO-3 package, 9 mm and 5.6 mm cases. The packages are hermetically sealed and have flat output windows. The TO-3 and 14-pin butterfly packages are equipped with Peltier micro cooler, photodiode and thermistor stabilizing the temperature and output of laser diode.
Proprietary technology used in the manufacturing of quantum well laser diodes and other optoelectronics devices includes the following technological operations:
- laser heterostructure MOCVD growth
- ohmic contact deposition and annealing
- mask fabrication for dry etching
- dry etching by collimated ion beam
- insulation of etched regions
- evaporation of adhesive and enhancing metal layers
- deposition of multilayer dielectric mirrors and antireflection coatings
- packaging
- testing and burn-in training